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IXYN100N120C3H1 - High-Speed IGBT

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Isolation Voltage 2500V~.
  • Anti-Parallel Sonic Diode.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 1200 V 1200 V ±20 V ±30 V 140 A 60 A 49 A 420 A 50 A 1.2 J ICM = 200 A  @VCE VCES 690 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in.
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