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Preliminary Technical Information
1200V XPTTM IGBT GenX3TM w/ Diode
IXYN100N120B3H1
Extreme Light Punch Through IGBT for 5-30 kHz Switching
E
VCES IC110 VCE(sat) tfi(typ)
= =
≤ =
1200V 76A
2.6V 240ns
Symbol
VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA)
PC TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient
TC = 25°C (Chip Capability)
TTCC
= 110°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load
TC = 25°C
50/60Hz IISOL ≤ 1mA
t = 1min t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200 1200
V V
±20 V ±30 V
165 A 76 A 42 A
480 A
50 A 1.2 J
ICM = 200
≤@VCE VCES
690
A W
-55 ... +150 150
-55 ...
IXYN100N120B3H1 Datasheet
