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IXYN82N120C3 - High-Speed IGBT

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • 2500V~ Isolation Voltage.
  • Positive Thermal Coefficient of Vce(sat).
  • High Current Handling Capability.
  • International Standard Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 12.

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1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN82N120C3 VCES = 1200V IC110 = 66A V CE(sat)  3.20V tfi(typ) = 93ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 120 A 66 A 380 A ICM = 164 A  @VCE VCES 600 W -55 ... +175 °C 175 °C -55 ... +175 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in.
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