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1200V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYN82N120C3H1
VCES = 1200V
IC110 = 46A
V CE(sat)
3.2V
tfi(typ) = 93ns
Symbol
VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA)
PC TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
Continuous Transient
TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load
TC = 25°C
50/60Hz IISOL 1mA
t = 1min t = 1s
Mounting Torque Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
105
A
46
A
42
A
320
A
ICM = 164
A
@VCE VCES
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in.
IXYN82N120C3H1 Datasheet
