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IXYN80N90C3H1 - IGBT

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Isolation Voltage 2500V~.
  • Anti-Parallel Sonic Diode.
  • Positive Thermal Coefficient of Vce(sat).
  • High Current Handling Capability.
  • International Standard Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 125°C Characteris.

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900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN80N90C3H1 VCES = 900V IC90 = 70A VCE(sat)  2.7V tfi(typ) = 86ns E Symbol VCES VCGR VGES VGEM IC25 IICF19100 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz t = 1min IISOL  1mA t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 115 A 70 A 42 A 340 A ICM = 160 @VCE VCES 500 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.
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