* Optimized for 20-60kHz Switching
* Square RBSOA
* Avalanche Rated
* Anti-Parallel Fast Diode
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Applications
* Power Inve
IXYP10N65C3D1 Datasheet (211.11 KB)
IXYP10N65C3D1
IXYS
211.11 KB
Igbt.
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650.
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