IXYP10N65C3D1 Description
+175 300 260 1.13/10 2.5 W °C °C °C °C °C Nm/lb.in. 650 V 3.5 6.0 V 10 A 200 A 100 nA 2.27 2.54 2.50 V V GC E Tab G = Gate E = Emitter C = Collector Tab = Collector.
IXYP10N65C3D1 Key Features
- Optimized for 20-60kHz Switching
- Square RBSOA
- Avalanche Rated
- Anti-Parallel Fast Diode
- Short Circuit Capability
- International Standard Package
- High Power Density
- Extremely Rugged
- Low Gate Drive Requirement