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IXYP10N65C3D1M - Extreme Light Punch Through IGBT

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IXYS

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IXYP10N65C3D1M Extreme Light Punch Through IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYP10N65C3D1M

Datasheet Details

Part number	IXYP10N65C3D1M
Manufacturer	IXYS
File Size	260.44 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXYP10N65C3D1M Datasheet
Additional preview pages of the IXYP10N65C3D1M datasheet.

Product details

Features

Optimized for 20-60kHz Switching.
Plastic Overmolded Tab for Electrical Isolation.
Square RBSOA.
Avalanche Rated.
Anti-Parallel Fast Diode.
Short Circuit Capability.
2500V~ Electrical Isolation.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = V.

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Published: Jul 20, 2016 |