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IXYP10N65C3D1M - Extreme Light Punch Through IGBT

Key Features

  • Optimized for 20-60kHz Switching.
  • Plastic Overmolded Tab for Electrical Isolation.
  • Square RBSOA.
  • Avalanche Rated.
  • Anti-Parallel Fast Diode.
  • Short Circuit Capability.
  • 2500V~ Electrical Isolation.
  • International Standard Package Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) IXYP10N65C3D1M VCES = 650V IC110 = 7A V CE(sat)  2.6V tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 150, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.