IXYP10N65C3D1 - IGBT

IXYS (now Littelfuse)

Key Features

Optimized for 20-60kHz Switching.
Square RBSOA.
Avalanche Rated.
Anti-Parallel Fast Diode.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement.

IXYP10N65C3D1 igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXYP10N65C3D1
Manufacturer	IXYS (now Littelfuse)
File Size	211.11 KB
Description	IGBT
Datasheet	IXYP10N65C3D1 Datasheet

Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXYP10N65C3D1M	Extreme Light Punch Through IGBT
IXYP10N65C3	IGBT
IXYP10N65B3D1	IGBT
IXYP15N65C3	IGBT
IXYP15N65C3D1	IGBT
IXYP15N65C3D1M	IGBT
IXYP20N120A4	IGBT
IXYP20N120B4	IGBT
IXYP20N120C4	IGBT
IXYP20N65B3	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 10A VCE(sat)  2.50V tfi(typ) = 23ns TO-220 Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 150, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.