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IXYP20N65C3D1 - IGBT

Download the IXYP20N65C3D1 datasheet PDF. This datasheet also covers the IXYA20N65C3D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Anti-Parallel Fast Diode.
  • Short Circuit Capability.
  • International Standard Packages Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYA20N65C3D1-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XPTTM 650V IGBT GenX3TM w/Diode IXYA20N65C3D1 IXYP20N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 50 20 18 105 10 200 ICM = 40 VCE VCES 10 200 -55 ... +175 175 -55 ... +175 A A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.