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IXYP30N120C3 - High-Speed IGBT

Key Features

  • High Voltage Package.
  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYP30N120C3 IXYH30N120C3 VCES = 1200V IC110 = 30A VCE(sat)  3.3V tfi(typ) = 88ns Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 1200 1200 V V ±20 V ±30 V 75 A 30 A 145 A 20 A 400 mJ ICM = 60 VCE VCES 500 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.