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IXYQ30N65B3D1, IXYH30N65B3D1, IGBT - IXYS

IXYH30N65B3D1-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXYQ30N65B3D1, IXYH30N65B3D1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXYQ30N65B3D1, IXYH30N65B3D1

Manufacturer:

IXYS

File Size:

198.55 KB

Description:

Igbt.

Note:

This datasheet PDF includes multiple part numbers: IXYQ30N65B3D1, IXYH30N65B3D1.
Please refer to the document for exact specifications by model.

IXYQ30N65B3D1 Description

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 VCES = 650V IC110 = 30A VCE(sat)  2.1V tfi(typ) = 33ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 1

IXYQ30N65B3D1 Features

* Optimized for Low 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Fast Diode

* Avalanche Rated

* Short Circuit Capability Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specifi

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📌 All Tags

IXYH30N65B3D1 IGBT IXYS