IXYT30N65C3H1HV - IGBT

Features

Optimized for 20-60kHz Switching.
Square RBSOA.
High Voltage.
Avalanche Rated.
Short Circuit Capability.
Anti-Parallel Sonic Diode Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement.

IXYT30N65C3H1HV IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYT30N65C3H1HV

Datasheet Details

Part number	IXYT30N65C3H1HV
Manufacturer	IXYS (now Littelfuse)
File Size	262.94 KB
Description	IGBT
Datasheet	IXYT30N65C3H1HV Datasheet
Additional preview pages of the IXYT30N65C3H1HV datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXYT30N65C3H1HV IXYH30N65C3H1 VCES = 650V IC110 = 30A VCE(sat)  2.7V tfi(typ) = 24ns TO-268HV Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 20, 2016 |