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IXYY8N90C3 - IGBT

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYY8N90C3 IXYP8N90C3 VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns Symbol VCES VCGR VGES VGEM IICC12150 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTCC = 25°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 900 V 900 V ±20 V ±30 V 20 A 8A 48 A 4A 15 mJ ICM = 16 @VCE VCES 125 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 0.35 g 3.