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MIXA81H1200EH - IGBT Module

Key Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

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MIXA81WB1200TEH XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Module H Bridge Part name (Marking on product) MIXA81H1200EH MIXA81H1200EH VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 E72873 Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.