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R3636EC20N - Distributed Gate Thyristor

This page provides the datasheet information for the R3636EC20N, a member of the R3636EC16K Distributed Gate Thyristor family.

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Datasheet Details

Part number R3636EC20N
Manufacturer IXYS
File Size 449.44 KB
Description Distributed Gate Thyristor
Datasheet download datasheet R3636EC20N Datasheet
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WESTCODE An IXYS Company Date:- 30 Mar, 2007 Data Sheet Issue:- 1 Distributed Gate Thyristor Types R3636EC16# to R3636EC20# Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS (Note 1) Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage MAXIMUM LIMITS 1600-2000 1600-2000 1600-2000 1700-2100 UNITS V V V V IT(AV) IT(AV) IT(AV) IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t diT/dt VRGM PG(AV) PGM VGD Tj op Tstg OTHER RATINGS Maximum average on-state current, Tsink=55°C (note 2) Maximum average on-state current. Tsink=85°C (note 2) Maximum average on-state current. Tsink=85°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 2) D.C.
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