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SS150TA60110 - Silicon Carbide Schottky Diode

IXYS

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Datasheet Details

Part number	SS150TA60110
Manufacturer	IXYS
File Size	187.56 KB
Description	Silicon Carbide Schottky Diode
Datasheet	SS150TA60110_IXYS.pdf

SS150TA60110 Product details

Features

Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device).
600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF.

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Published: Aug 31, 2013 |