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T0800TB45E - Insulated Gate Bi-Polar Transistor

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Part number T0800TB45E
Manufacturer IXYS (now Littelfuse)
File Size 267.09 KB
Description Insulated Gate Bi-Polar Transistor
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WESTCODE An IXYS Company Date:- 14 July, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. Notes: - 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) The use of an anti-parallel diode is recommended.
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