VUB120-16NOX Datasheet | IXYS

Features / Advantages: - Package with DCB ceramic base plate - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current - X2PT - 2nd generation Xtreme light Punch Through - Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic - Thin wafer technology bined with X2PT design results in a petitive low VCE(sat) and low thermal resistance Applications: - 3~ Rectifier with brake unit for drive inverters Package: V2-Pack - Isolation Voltage: 3600 V~ - Industry standard outline - Ro HS pliant - Soldering pins for PCB mounting - Height: 17 mm - Base plate: DCB ceramic - Reduced weight - Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h Rectifier Symbol VRSM VRRM IR VF I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current forward voltage drop bridge output current VR = 1600 V VR = 1600 V IF = 60 A IF = 180 A IF = 60 A IF = 180 A TC = 90°C rectangular d =⅓ VF0 r F R th JC R th CH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60...