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DE275-501N16A - RF Power MOSFET

Features

  • SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C Tc = 25°C DRAIN SD1 SD2.
  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
DE275-101N30A RF Power MOSFET
DE275-102N06A RF Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified 1.6mm (0.063 in) from case for 10 s VDSS ID25 RDS(on) PDHS Maximum Ratings 500 500 ±20 ±30 16 98 16 20 5 >200 375 3.0 0.33 -55…+150 150 -55…+150 300 2 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 16 A .
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