* SG1 SG2 GATE = = = = 500 V 44 A 0.14 Ω 600W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM
DE475-501N44A Datasheet (82.45 KB)
DE475-501N44A
IXYS Corporation
82.45 KB
Rf power mosfet.
Directed Energy, Inc. An DE475-501N44A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Chan.
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