* GaAs Schottky Diode with Enhanced Barrier Height:
* lowest operating forward voltage drop due to additional injection of minority carriers
* high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to sh
DGS17-03CS Datasheet (55.40 KB)
DGS17-03CS
IXYS Corporation
55.40 KB
Gallium arsenide schottky rectifier.
Gallium Arsenide Schottky Rectifier Second generation DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Type DGS 17-03CS Marking.
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