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DSEA16-06BC - (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220

Features

  • z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip 260 60 2500 1165 / 2.515 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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Datasheet Details

Part number DSEA16-06BC
Manufacturer IXYS (Littelfuse)
File Size 568.78 KB
Description (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
Datasheet download datasheet DSEA16-06BC Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
DSEA16-06AC (DSEA16-06AC / DSEC16-06AC) HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM
DSEC16-06BC (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 600 DSEA 16-06BC DSEC 16-06BC 1 2 3 DSEA IFAV VRRM trr DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns ISOPLUS220TM E153432 2 3 Type 1 DSEC G D S Isolated back surface Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 110°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 19 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C °C W V~ N / lb g Applications z z z z z z z z Features z 1.6 mm (0.
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