DSEC30-02A
DSEC30-02A is HiPerFRED Epitaxial Diode manufactured by IXYS.
Features
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- International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25°C mounting torque typical
95 0 1.2 6
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- Symbol IR ①
Test Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C
Characteristic Values typ. max. 100 0.5 0.85 1.05 1.6 0.25 µA m A V V K/W K/W ns 4.4 A
- VF ② Rth JC Rth CH trr IRM
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- Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 25 A; -di F/dt = 100 A/µs TVJ = 100°C
25 3.5
Advantages
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- Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the mutating switch
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions see Outlines.pdf
1-2
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DSEC 30-02A
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50 A 40 IF 30 TVJ = 150°C TVJ = 100°C TVJ = 25°C 20 Qr
700 n C 600 500
30 TVJ = 100°C VR = 100 V IRM IF = 30 A 20 15 10 5 0 0 IF = 15 A IF = 7.5 A A 25
TVJ = 100°C VR = 100 V IF = 30 A IF = 15 A IF = 7.5 A
400 300 200
10 100 0 0.0 0 100
D4
200 400 µs 1000 600 A/ 800 -di F/dt
1.2 V...