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IXFA12N50P - Polar MOSFET

Download the IXFA12N50P datasheet PDF. This datasheet also covers the IXFP12N50P variant, as both devices belong to the same polar mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb. in. 4 3 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Va.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP12N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFA12N65X2 Power MOSFET IXYS
IXFA12N65X2 N-Channel MOSFET INCHANGE
IXFA102N15T N-Channel MOSFET INCHANGE
IXFA110N15T2 N-Channel MOSFET INCHANGE
IXFA130N10T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFA102N15T Power MOSFET
IXFA10N60P Polar MOSFET
IXFA10N80P Power MOSFET
IXFA110N15T2 Power MOSFET
IXFA130N10T Power MOSFET

Full PDF Text Transcription

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Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 12 20 12 24 600 20 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ TO-263 (IXFA) G S (TAB) TO-220 (IXFP) G V/ns W °C °C °C °C °C G = Gate S = Source D S (TAB) D = Drain TAB = Drain Features z z 1.
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