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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
IXFA 3N80 IXFP 3N80
VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 3.6 14.4 3.6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-220 (IXFP)
D (TAB)
G DS
TO-263 (IXFA)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.
IXFA3N80 Datasheet
