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IXFA4N100Q - Power MOSFET

Download the IXFA4N100Q datasheet PDF. This datasheet also covers the IXFP4N100Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • g g.
  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Rated for unclamped Inductive load Switching (UIS).
  • Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V nA mA mA W VDSS VGS(th) IG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP4N100Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFA4N85X Power MOSFET IXYS
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IXFA110N15T2 N-Channel MOSFET INCHANGE
IXFA12N65X2 Power MOSFET IXYS
IXFA12N65X2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFA4N100Q Power MOSFET
IXFA4N100P Power MOSFET
IXFA102N15T Power MOSFET
IXFA10N60P Polar MOSFET
IXFA10N80P Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.13/10 4 2 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in.
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