IXFC26N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gat
- Part: IXFC26N50
- Description: (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220
- Manufacturer: IXYS
- Size: 95.45 KB
Other IXFC26N50 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXFC26N50P | PolarHV HiPerFET Power MOSFET |