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IXFC26N50P - PolarHV HiPerFET Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Datasheet preview – IXFC26N50P

Datasheet Details

Part number IXFC26N50P
Manufacturer IXYS
File Size 115.59 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFC26N50P Datasheet
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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated IXFC 26N50P VDSS = 500 V = 15 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 15 78 26 40 1.0 10 130 -55 ... +150 150 -55 ...
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