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IXFE180N10 - Power MOSFET

Features

  • Conforms to SOT-227B outline.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFE 180N10 VDSS ID25 RDS(on) = 100 V = 176 A = 8 mΩ trr ≤ 250 ns Maximum Ratings 100 100 ± 20 ± 30 176 100 720 180 60 3 5 500 -55 ... +150 150 -55 ...
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