* Conforms to SOT-227B outline
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance Mounting
IXFE180N10 Datasheet (101.35 KB)
IXFE180N10
IXYS Corporation
101.35 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR E.
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