IXFE44N60 Datasheet | IXYS

Features - Conforms to SOT-227B outline - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) - Low package inductance - Fast intrinsic Rectifier Applications - DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 V V n A - Battery chargers - Switched-mode and resonant-mode - DC choppers - Temperature and lighting controls power supplies VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 3 m A V DS = VGS, ID = 8 m A V GS = ±20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V GS = 10 V, ID = IT Note1 100 µ A 2 m A 130 m Ω Advantages - Low cost - Easy to mount - Space savings - High power density © 2002 IXYS All rights reserved 98894 (1/02) IXFE 44N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT RG = 1 Ω (External), 55 110 45 330 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT 60 65 0.25 0.07 45 S p F p F p F ns ns ns ns n C n C n C K/W K/W ISOPLUS-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK VDS = 10 V; ID = IT, Note:1 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note:1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 176 1.3 250 1.4 8 A A V ns µC A IF = 50A, -di/dt = 100 A/µs, VR = 100 V Please see IXFN44N60 data sheet for characteristic curves. Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. Test current IT = 22A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961...