IXFE180N10 Datasheet | IXYS

Features - Conforms to SOT-227B outline - Encapsulating epoxy meets UL 94 V-0, flammability classification - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance Mounting torque Terminal connection torque 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 19 g - Fast intrinsic Rectifier Applications - DC-DC converters Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS= ±20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = IT Note 2 Min. 100 2 Characteristic Values Typ. Max. V 4 ± 100 V n A µA m A mΩ - Synchronous rectification - Battery chargers - Switched-mode and resonant-mode - DC choppers - Temperature and lighting - Low voltage relays Advantages - Easy to mount power supplies controls TJ = 25°C TJ = 125°C 100 2 8 - Space savings - High power density © 2002 IXYS All rights reserved 98902 (2/02) IXFE 180N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK Note: IT = 90 A 0.07 VGS = 10 V, VDS = 0.5 - VDSS, ID = IT VGS = 10 V, VDS = 0.5 - VDSS, ID = IT RG = 1 Ω (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 60A, Note 2 Characteristic Values Min. Typ. Max. 60 90 9100 3200 1600 50 90 140 65 360 65 190 0.25 S p F p F p F ns ns ns ns n C n C n C K/W K/W ISOPLUS-227 B Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM Notes: VGS = 0 Repetitive; Note1 IF = 100 A, VGS = 0 V, Note2 I F = 50 A, -di/dt = 100 A/ µ s, V R = 50 V Characteristic Values Min. Typ. Max. 180 720 1.5 250 1.1 13 A A V ns µC A Please see IXFN180N10 data sheet for characteristic curves. 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 % 3. IT =...