IXFG55N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell
| Part Number | Description |
|---|---|
| IXFA102N15T | Power MOSFET |
| IXFA10N60P | Polar MOSFET |
| IXFA10N80P | Power MOSFET |
| IXFA110N15T2 | Power MOSFET |
| IXFA12N50P | Polar MOSFET |