* z z z z z 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.4/6 Nm/lb-in z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFG55N50 Datasheet (115.44 KB)
IXFG55N50
IXYS Corporation
115.44 KB
Hiperfet power mosfet.
HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Sy.
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