IXFH110N15T2 - TrenchT2 HiperFET Power MOSFET

Product Overview

IXYS Corporation

Part number	IXFH110N15T2
Manufacturer	IXYS Corporation
File Size	182.18 KB
Description	TrenchT2 HiperFET Power MOSFET
Datasheet	IXFH110N15T2 Datasheet
Additional preview pages of the IXFH110N15T2 datasheet.

z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA.

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Published: May 30, 2011 |