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IXFH11N80 Key Features

  • International standard packages
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS)
  • Low package inductance
  • easy to drive and to protect
  • Fast intrinsic Rectifier
  • VDSS VGS = 0 V

Related IXYS Datasheets

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IXFH11N80 Description

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: G = Gate, D = Drain, S = Source, TAB = Drain 300 W -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.