IXFH14N80 mosfets equivalent, hiperfet power mosfets.
300 -55 ... +150 150 -55 ... +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Sw.
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS .
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