Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 800 800 ± 30 ± 40 20 50 10 30 1.0 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types 300 260 PLUS220 SMD(IXFV..S) 1.13/10 Nm/lb.in. 1..65 / 2.5..15 6 5.
