IXFH20N80P - PolarHV HiPerFET Power MOSFET

Product Overview

IXYS Corporation

Part number	IXFH20N80P
Manufacturer	IXYS Corporation
File Size	342.02 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFH20N80P Datasheet
Additional preview pages of the IXFH20N80P datasheet.

D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID =.

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Published: May 30, 2011 |