IXFH230N10T - Trench HiperFET Power MOSFET

Product Overview

IXYS Corporation

Part number	IXFH230N10T
Manufacturer	IXYS Corporation
File Size	181.15 KB
Description	Trench HiperFET Power MOSFET
Datasheet	IXFH230N10T Datasheet
Additional preview pages of the IXFH230N10T datasheet.

z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ±.

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Published: May 30, 2011 |