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IXFH230N10T - N-Channel MOSFET

Overview

isc N-Channel MOSFET Transistor IXFH230N10T ·.

Key Features

  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.