IXFH230N10T Datasheet | Specifications & PDF Download

Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VD

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isc N-Channel MOSFET Transistor IXFH230N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Ma

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