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IXFH230N10T - Trench HiperFET Power MOSFET

Features

  • z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds 300 260 6 International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ±.

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Datasheet Details

Part number IXFH230N10T
Manufacturer IXYS (now Littelfuse)
File Size 181.15 KB
Description Trench HiperFET Power MOSFET
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Preliminary Technical Information Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH230N10T VDSS ID25 RDS(on) = 100V = 230A ≤ 4.7mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 20 ± 30 230 160 500 115 1.5 650 -55 ... +175 175 -55 ... +175 V V V V A A A A J W °C °C °C °C °C g Features z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.
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