IXFH24N80P - PolarHV HiPerFET Power MOSFET

Product Overview

IXYS Corporation

Part number	IXFH24N80P
Manufacturer	IXYS Corporation
File Size	175.01 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFH24N80P Datasheet
Additional preview pages of the IXFH24N80P datasheet.

D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5.

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Published: May 30, 2011 |