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IXFH24N90P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

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Overview

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 24A 420mΩ 300ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 24 48 12 1 15 660 -55 ...

+150 150 -55 ...

+150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

  • z z z z TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V.

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