IXFL36N110P - Polar Power MOSFET HiPerFET

Product Overview

IXYS Corporation

Part number	IXFL36N110P
Manufacturer	IXYS Corporation
File Size	104.53 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFL36N110P Datasheet
Additional preview pages of the IXFL36N110P datasheet.

z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 TJ.

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Published: May 13, 2011 |