IXFL36N110P Datasheet | IXYS

Features z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1100 3.5 6.5 ± 300 50 V z Easy to mount Space savings High power density Applications: V n A μA z z z z 4 m A 260 mΩ High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All rights reserved DS99907A (04/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.15 VGS = 10V, VDS = 0.5 - VDSS, ID = 18A Gate input resistance VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 18A, Note 1 Characteristic Values Min. Typ. Max. 20 32 23 1240 110 0.85 60 54 94 45 350 117 157 S n F p F p F Ω ns ns ns ns n C n C n C 0.24 °C/W °C/W Note: Bottom Tab meets 2500 Vrms isolation to the other pins. Tab ISOPLUS i5-Pak TM HV (IXFL) Outline Resistive Switching Times VGS = 10V, VDS = 0.5 - VDSS, ID = 18A RG = 1Ω (External) Source-Drain Diode TJ = 25°C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/μs VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 36 144 1.5 A A V 300 ns 2.3 16 μC A ..net Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical...