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IXFV18N90PS - Polar Power MOSFET HiPerFET

Download the IXFV18N90PS datasheet PDF. This datasheet also covers the IXFH18N90P variant, as both devices belong to the same polar power mosfet hiperfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z G S D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) D = Drain TAB = Drain International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.0 6.0 ± 100 V V nA z z z High Power Density Easy.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH18N90P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFV18N90PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFV18N90PS. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS(on) trr = = ≤ ≤...

View more extracted text
18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 18A 600mΩ 300ns TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 18 36 9 800 15 540 -55 ... +150 150 -55 .

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