Datasheet Summary
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 80N50 IXFN 75N50
ID25 80 A 75 A
RDS(on) 50 mΩ 55 mΩ
500 V 500 V
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 75N50 80N50 75N50 80N50
Maximum Ratings 500 500 ± 20 ± 30 75 80 300 320 80 64 6 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A A A mJ J V/ns W °C °C °C V~...
