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IXFN75N50 - (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

Download the IXFN75N50 datasheet PDF. This datasheet also covers the IXFN80N50 variant, as both devices belong to the same (ixfn80n50 / ixfn75n50) hiperfet power mosfets single die mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN80N50_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 75N50 80N50 75N50 80N50 Maximum Ratings 500 500 ± 20 ± 30 75 80 300 320 80 64 6 5 700 -55 ... +150 150 -55 ...