IXYS IXFN80N50P
PolarHV HiPerFET Power MOSFET
| Part No. | IXFN80N50P |
|---|---|
| Datasheet | IXFN80N50P Download |
| Manufacturer |  IXYS |
| Description | PolarHV HiPerFET Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
500 500 ± 40 ± 30 80 200 80 80 3.0 10 700 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = SourcE D = Drain Either source tab S can be used forsource current or Kelvin gate return. 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz; IISOL ≤ 1 mA 300 2500FEATURES
z Fast intrinsic diode z International standard package z Unclamped Inductive Switching (UIS) rated z UL recognized. z Isolated mounting base Advantages z Easy to mount z Space savings z High power density Mounting torque Terminal connection torque (M4) 1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. 30 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V nA μA mA mΩ DS99477(09/05) VGS = 10 V, ID = 0.5 ID25, Note 1 © 2005 IXYS All rights reserved IXFN 80N50P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min.
