IXFN80N50Q2 - HiPerFET Power MOSFET

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IXYS

Part number	IXFN80N50Q2
Manufacturer	IXYS
File Size	528.82 KB
Description	HiPerFET Power MOSFET
Datasheet	IXFN80N50Q2 Datasheet
Additional preview pages of the IXFN80N50Q2 datasheet.

Double metal process for low gate resistance.
miniBLOC, with Aluminium nitride isolation.
Unclamped Inductive Switching (UIS) rated.
Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g.
Fast intrinsic Rectifier.

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Published: Jun 24, 2010 |