IXYS IXFN80N50Q2
HiPerFET Power MOSFET
| Part No. | IXFN80N50Q2 |
|---|---|
| Datasheet | IXFN80N50Q2 Download |
| Manufacturer |  IXYS |
| Description | HiPerFET Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
G S 500 500 ± 30 ± 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ... +150 2500 V V V V A A A mJ J V/ns W °C °C °C VFEATURES
●Double metal process for low gate resistance●miniBLOC, with Aluminium nitride isolation
●Unclamped Inductive Switching (UIS) rated
●Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
●Fast intrinsic Rectifier
APPLICATIONS
● DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 0 0 2 . 5 5.0 V V● Switched-mode power supplies
● DC choppers and resonant-mode V DSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VG S, ID = 8mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
● ID25 Note 1 TJ = 25°C TJ = 125°C
● Pulse generators ±200 nA 100 µA 5 mA 60 mΩ Advantages
● Easy to mount
● Space savings
● High power density © 2003 IXYS All rights reserved DS99031A(06/03) IXFNwww.DataSheet4U.com 80N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
