Part IXFN80N50Q2
Description HiPerFET Power MOSFET
Category MOSFET
Manufacturer IXYS
Size 528.82 KB
IXYS
IXFN80N50Q2

Overview

  • Double metal process for low gate resistance
  • miniBLOC, with Aluminium nitride isolation
  • Unclamped Inductive Switching (UIS) rated
  • Low package inductance G = Gate S = Source S
  • D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source
  • 5/13 Nm/. 1.5/13 Nm/. 30 g
  • Fast intrinsic Rectifier