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IXFN100N25 - N-Channel MOSFET

Features

  • International standard package.
  • miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFN 100N25 VDSS ID25 RDS(on) = 250 V = 100 A = 27 mW trr £ 250 ns Maximum Ratings 250 250 ±20 ±30 100 400 100 64 3 5 600 -55 ... +150 150 -55 ...
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