• Part: IXFN20N120P
  • Description: Polar Power MOSFET HiPerFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 127.25 KB
Download IXFN20N120P Datasheet PDF
IXYS
IXFN20N120P
IXFN20N120P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Features - International standard package - Encapsulating epoxy meets UL 94 V-0, flammability classification - mini BLOC with Aluminium nitride 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1m A Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 isolation - Fast recovery diode - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect Advantages - Easy to mount - Space savings - High power density Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 10A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 200 V V n A Applications: z z z 25 μA 5 m A 570 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, All rights reserved DS99889A (04/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.05 VGS = 10V, VDS = 0.5 - VDSS, ID = 10A Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 - VDSS, ID = 10A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 10A, Note 1 Characteristic Values Min. Typ. Max. 10 16 11.1 600 60 1.60 49 45 72 70 193 74 85 0.21 S n F p F p F Ω ns ns ns ns n C n C n C °C/W °C/W SOT-227B Outline Source-Drain Diode TJ = 25°C unless otherwise specified) IS ISM VSD trr QRM IRM ..net Characteristic Values Min. Typ. Max. 20 80 1.5 A A V VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 10A, -di/dt = 100A/μs VR = 100V 300 ns 0.84 9 μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change...