Datasheet4U Logo Datasheet4U.com

IXFN20N120P - Polar Power MOSFET HiPerFET

Features

  • International standard package.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 isolation.
  • Fast recovery diode.
  • Unclamped Inductive Switching (UIS) rated.
  • Low package inductance - easy to drive and to protect Advantages.
  • Easy.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN20N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 20A 570mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 20 50 10 1 20 595 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Published: |